منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولElectronic and Optical Properties of Dislocations in Silicon
Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is propos...
متن کاملSurface Morphology and Electronic Properties of Dislocations in AlGaN/GaN Heterostructures
110 The AlGaN/GaN heterstrostructures with its intrinsic two-dimensional electron gas (2DEG) is a promising materials system for high speed, high power, and high temperature electronics. Recently, it has been shown that the electron mobility (μ) of the 2DEG can exceed 50,000 cm2/Vs at low temperatures.1,2 Based on what is known about the 2DEG system in AlGaAs/GaAs heterostructures, growth morph...
متن کاملStructural and electronic properties of an ordered grain boundary formed by separated (1,0) dislocations in graphene.
We present an investigation of the structural and electronic properties of an ordered grain boundary (GB) formed by separated pentagon-heptagon pairs in single-layer graphene/SiO2 using scanning tunneling microscopy/spectroscopy (STM/STS), coupled with density functional theory (DFT) calculations. It is observed that the pentagon-heptagon pairs, i.e., (1,0) dislocations, form a periodic quasi-o...
متن کاملcontrol of the optical properties of nanoparticles by laser fields
در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2016
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-016-9836-x